| PART |
Description |
Maker |
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| KTX403U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (SWITCHING, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| 2SC4157 E000909 |
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| RM600DY-66S RM600DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| NSVBAS21TMR6T1G NSVBAS21TMR6T2G |
High Voltage Switching Diode
|
ON Semiconductor
|
